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IRF640T
N-channel 200V - 0.15 - 15A - TO-220 MESH OVERLAYTM Power MOSFET
General features
Type IRF640T

VDSS 200V
RDS(on) <0.16
ID 15A
Extremely high dv/dt capability Gate charge minimized Very low intrinsic capacitances
TO-220
3 1 2
Description
This Power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources.
Internal schematic diagram Applications
Switching application
Order codes
Part number IRF640T Marking IRF640T Package TO-220 Packaging Tube
October 2006
Rev 1
1/12
www.st.com 12
Contents
IRF640T
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................. 6
3 4 5 6
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/12
Rev 1
IRF640T
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VGS ID ID IDM
(1)
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating factor Value 200 20 15 10 60 90 0.72 15 -55 to 150 Unit V V A A A W W/C V/ns C
PTOT dv/dt(2) TJ Tstg
Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 15A, di/dt 300A/s, VDD =80%V(BR)DSS
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal data
Parameter Thermal resistance junction-case max Thermal resistance junction-ambient max Maximum lead temperature for soldering purpose Value 1.38 62.5 300 Unit C/W C/W C
Table 3.
Symbol IAR EAS
Avalanche data
Parameter Avalanche curent, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 15 110 Unit A mJ
Rev 1
3/12
Electrical characteristics
IRF640T
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 4.
Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating @125C VGS = 20V VDS= VGS, ID = 250A VGS= 10V, ID= 7.5A 2 3 0.15 Min. 200 1 10
100
Typ.
Max.
Unit V A A nA V
4 0.16
Table 5.
Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =8V, ID = 7.5A VDS =25V, f=1 MHz, VGS=0 VDD=160V, ID = 15A VGS =10V (see Figure 14) Min. Typ. 12 800 165 26 24 4.4 11.6 Max. Unit S pF pF pF nC nC nC
1. Pulsed: pulse duration=300s, duty cycle 1.5%
4/12
Rev 1
IRF640T
Electrical characteristics
Table 6.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Test conditions VDD=100 V, ID= 7.5A, RG=4.7, VGS=10V (see Figure 13) VDD = 100 V, ID = 7.5A, RG = 4.7, VGS = 10V (see Figure 13) Min. Typ. 11.5 22 Max. Unit ns ns
Turn-off delay time Fall time
19 11
ns ns
Table 7.
Symbol ISD ISDM(1) VSD(2) trr Qrr IRRM trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=15A, VGS=0 ISD=15A, VDD=50V di/dt = 100A/s, (see Figure 18) ISD=15A, VDD=50V di/dt = 100A/s, Tj=150C (see Figure 18) 125 0.55 8.8 148 0.73 9.9 Test conditions Min Typ. Max 15 60 1.6 Unit A A V ns C A ns C A
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300s, duty cycle 1.5%
Rev 1
5/12
Electrical characteristics
IRF640T
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Static drain-source on resistance
Figure 6.
Normalized BVDSS vs temperature
6/12
Rev 1
IRF640T Figure 7. Gate charge vs gate-source voltage Figure 8.
Electrical characteristics Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
Figure 11. Source-drain forward characteristics
Figure 12. Maximum avalanche energy vs temperature
Rev 1
7/12
Test circuit
IRF640T
3
Test circuit
Figure 14. Gate charge test circuit
Figure 13. Switching times test circuit for resistive load
Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit
Figure 17. Unclamped inductive waveform
Figure 18. Switching time waveform
8/12
Rev 1
IRF640T
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
Rev 1
9/12
Package mechanical data
IRF640T
TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
10/12
Rev 1
IRF640T
Revision history
5
Revision history
Table 8.
Date 06-Oct-2006
Revision history
Revision 1 First Release Changes
Rev 1
11/12
IRF640T
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12/12
Rev 1

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